PART |
Description |
Maker |
SPP80N06S2-H5 SPB80N06S2-H5 |
OptiMOS Power-Transistor 的OptiMOS功率晶体 Low Voltage MOSFETs - TO220/263; 80A; 55V; NL; 5.5mOhm
|
INFINEON[Infineon Technologies AG]
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IPP09N03LA IPI09N03LA |
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 25V, TO220, RDSon = 8.9mOhm, 50A, LL OptiMOS®2 - Power packages
|
Infineon
|
IPI06N03LA IPP06N03LA |
OptiMOS®2 - Power packages Low Voltage MOSFETs - OptiMOS? Power MOSFET, 25V, TO220, RDSon = 6.2mOhm, 50A, LL
|
Infineon
|
PPN0500B 542AB0500 915AB0500MBP |
HEATSINK TO220/218 5.0C/W Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits HEATSINK TO220/218 5.8C/W 散热片TO220/218 5.8摄氏
|
KEMET Corporation
|
IPB04N03LA IPP04N03LA IPI04N03LA |
OptiMOS 2 Power-Transistor Low Voltage MOSFETs - OptiMOS? Power MOSFET, 25V, TO220, RDSon = 4.2mOhm, 80A, LL OptiMOS®2 - Power packages
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
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APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|
SPD08P06P SPU08P06P |
Low Voltage MOSFETs - Power MOSFET, -60V, I-PAK, RDSon = 0.30 SIPMOS Power-Transistor Low Voltage MOSFETs - Power MOSFET, -60V, DPAK, RDSon = 0.30
|
INFINEON[Infineon Technologies AG]
|
IXFX38N80Q2 IXFK38N80Q2 IXFN38N80Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Q Low intrinsic R
|
IXYS[IXYS Corporation]
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APT5014BLL APT5014SLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS 电源MOS 7TM是一个低损耗,高电压,N沟道增强模式的新一代功率MOSFET Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS 7 500V 35A 0.140 Ohm
|
Advanced Power Technology, Ltd.
|
KMA3D0N20SA |
Low Voltage MOSFETs
|
Korea Electronics (KEC)
|
SPP80N03S2L-03 SPB80N03S2L-03 SPI80N03S2L-03 |
80 A, 30 V, 0.0038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PLASTIC, TO-220, 3 PIN OptiMOS Power-Transistor 的OptiMOS功率晶体 Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 2.8mOhm, 80A, LL Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.1mOhm, 80A, LL 80 A; 30V; LL; 3,1 mOhm
|
INFINEON[Infineon Technologies AG]
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